Silicon NPN triple diffusion planar type

For power amplification Complementary to 2SB1416 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

文件：86.32 Kbytes 页数：3 Pages

Panasonic

松下

丝印：D2136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

文件：1.30854 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D2136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

文件：1.30854 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features Three Floating High-Side Drivers in Bootstrap Operation to 600V 200mA Source / 350mA Sink Output Current Capability Outputs Tolerant to Negative Transients, dV/dt Immune Logic Input 3.3V Capability Internal Deadtime of 290ns to Protect MOSFETs Matched Prop Delay for All Channels Ou

文件：1.58842 Mbytes 页数：14 Pages

DIODES

美台半导体

3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features - Three Floating High-Side Drivers in Bootstrap Operation to 600V - 200mA Source / 350mA Sink Output Current Capability - Outputs Tolerant to Negative Transients, dV/dt Immune - Logic Input 3.3V Capability - Internal Deadtime of 290ns to Protect MOSFETs and IGBTs - Matched Prop Dela

文件：806.61 Kbytes 页数：12 Pages

DIODES

美台半导体

Three-phase semI-brIdge circuit drive chip

文件：820.46 Kbytes 页数：13 Pages

EGMICRO

屹晶微电子