Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise (typical \n• High gain - 11 dB minimum\n• Surface mount;

TT Electronics

METAL GATE RF SILICON FET

文件：25.6 Kbytes 页数：3 Pages

SEME-LAB

Integrated Circuit 7-Stage Driver Array

Features: • Low Output Saturation Voltage • Built–In Diodes for Absorption of Output Surge • Built–In Base Current Limiting Resistor (3kΩ Typ) • With 7 Units, it is Ideal for 14–Digit Printers Applications: • Driving Battery–Operated Compact Printers (Especially LCD Type) •

文件：22.78 Kbytes 页数：2 Pages

NTE

EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS

文件：1.13139 Mbytes 页数：69 Pages

TI

德州仪器

EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS

文件：1.13139 Mbytes 页数：69 Pages

TI

德州仪器