METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz t

文件：15.43 Kbytes 页数：2 Pages

SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Very low C(rss)\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

Single-Piece 256kb Nonvolatile SRAM

文件：430.18 Kbytes 页数：12 Pages

Maxim

美信

DS2030L 3.3V Single-Piece 256kb Nonvolatile SRAM

文件：181.03 Kbytes 页数：12 Pages

Maxim

美信

3.3V Single-Piece 256k Nonvolatile SRAM

文件：610.71 Kbytes 页数：12 Pages

Maxim

美信