GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED

FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 17 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz

文件：30.64 Kbytes 页数：2 Pages

SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 17 dB minimum;

TT Electronics

Integrated Circuit Gas-Discharge Display Driver

Description: The NTE2026 is a monolithic high–voltage bipolar integrated circuit which dramatically reduces the number of discrete components required to link MOS, or other low–voltage circuitry, with the anodes of gas–discharge display panels. This device contains six drivers. Each driver h

文件：20.15 Kbytes 页数：2 Pages

NTE

UNBLANCED TO BALANCES SIGNAL CONVERTER

文件：237.9 Kbytes 页数：6 Pages

TOSHIBA

东芝

COLOR TV SCANNING AND POWER SUPPLY PROCESSOR

This Integrated Circuit Uses I2L Bipolar Technology and Combines analog signal processing with digital processing.

文件：491.33 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体