METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz

文件：39.58 Kbytes 页数：2 Pages

SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

Low-Voltage, Low RON, Dual DPDT Analog Switch

文件：188.25 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

Low-Voltage, Low ON, Dual DPDT Analog Switch

DESCRIPTION The DG2017 is a dual DPDT (double-pole/double-throw), optimized for high performance analog switching, and specifically designed to benefit portable audio applications. FEATURES • Halogen-free according to IEC 61249-2-21 Definition • Low voltage operation (2 V to 5.5 V) • Low on-r

文件：77.4 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

Low-Voltage, Low RON, Dual DPDT Analog Switch

FEATURES • Low voltage operation (2 V to 5.5 V) • Low on-resistance at 2.7 V - RON: SW1, SW2 - 3.2  SW3, SW4 - 0.64  • Fast switching: tON = 46 ns tOFF = 21 ns • QFN-16 (4 mm x 4 mm) package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

文件：143.27 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司