METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIO

文件：15.42 Kbytes 页数：2 Pages

SEME-LAB

Seme LAB

Intrinsically Safe Analog-Temperature Multiplexer DIN-Rail Model D2010M

General description: D2000M series Intrinsically Safe Multiplexing System consists of one to four Analog-Temperature Multiplexer units model D2010M, up to twelve Expander units model D2011M, or up to four Digital Multiplexer units model D2030M, mounted in Hazardous Area/Hazardous Locations Zon

文件：284.64 Kbytes 页数：2 Pages

GMI

电流反馈型相位控制电路

D2010是一块相位控制集成电路，采用双级工艺。具有负载电流保护、软启动等功能。广泛应用于机床马达的控制。 ·全波电流感应\n·主电源可调\n·软启动\n·程控电流大小，防止过流及过高输出\n·电压与电流同步\n·自动触发开关\n·内部电压监控\n·电流要求：≤3mA\n·触发脉冲典型值：125mA\n·温度补偿基准电压\n·封装形式：DIP16、SOP16;

Silicore

芯谷科技

Intrinsically Safe Analog-Temperature Multiplexer DIN-Rail Model D2010M

General description: D2000M series Intrinsically Safe Multiplexing System consists of one to four Analog-Temperature Multiplexer units model D2010M, up to twelve Expander units model D2011M, or up to four Digital Multiplexer units model D2030M, mounted in Hazardous Area/Hazardous Locations Zon

文件：284.64 Kbytes 页数：2 Pages

GMI

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIO

文件：15.42 Kbytes 页数：2 Pages

SEME-LAB

Seme LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics