TRIPLE DIFFUSED PLANAR NPN SILICON TRANSISTOR

Low Feq. Power Amp. Triple Diffused Planar NPN Silicon Transistor Features 1) Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A 2) Excellent current characteristics of DC current gain. 3) Large collector power dissipation: PC=30W(TC=25℃) 4) Complementary pair with 2SB1187

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ROHM

罗姆

NPN Transistor

Triple Diffused Planar NPN Silicon TransistorLow Feq. Power Amp.

ROHM

罗姆

32-bit Microcontrollers (Non Promotion)

The SH7618 Group is supported only for customers who have already adopted these products. The RX Family or RZ Family are recommended for new designs.

Renesas

瑞萨

32-bit Microcontrollers (Non Promotion)

The SH7618 Group is supported only for customers who have already adopted these products. The RX Family or RZ Family are recommended for new designs.

Renesas

瑞萨

Package：176-LFBGA；包装：托盘 类别：集成电路（IC） 微控制器 描述：IC MCU 32BIT ROMLESS 176LFBGA

RENESAS

瑞萨