METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 6W – 7.2V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz

文件：38.4 Kbytes 页数：4 Pages

SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

Leaded Power Chokes DMI

文件：197.58 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Radial Coil Inductors

Features • Wide inductance range • Lowest DCR • Tape packaging for auto-insertion • Shrink tubing protected winding • Fixed lead spacing • High peak current support • Large saturation current capacity • Small footprint Applications • TV and Audio equipment • Telecommunication devices

文件：1.60022 Mbytes 页数：5 Pages

BEL

SmartSocket 16k/64k

DESCRIPTION The DS1213B SmartSocket is a 28-pin, 600 mil DIP socket with a built-in CMOS controller circuit and an embedded lithium energy source. It accepts either 24-pin 2K x 8 (lower-justified) or 28-pin 8K x 8 JEDEC bytewide CMOS static RAM. When the socket is mated with a CMOS RAM, it prov

文件：75.26 Kbytes 页数：7 Pages

DALLAS