OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

METAL GATE RF SILICON FET

文件：16.219 Kbytes 页数：2 Pages

SEME-LAB

Dekapot Coaxial-Dial Decade Potentiometer

文件：195.96 Kbytes 页数：2 Pages

IET

1000V, 26A, 30MHz

MOSFET Driver Hybrid The DRF1211 hybrid includes a high power gate driver and the power MOSFET. It was designed to provide the system designer increased flexibility and lowered cost over a non-integrated solution. FEATURES • Switching Frequency: DC TO 30MHz • Low Pulse Width Distortion •

文件：1.81056 Mbytes 页数：6 Pages

Microsemi

美高森美

Nonvolatile Controller x 8 Chip

DESCRIPTION The DS1211 Nonvolatile Controller x 8 Chip is a CMOS circuit which solves the application problem of converting CMOS RAMs into nonvolatile memories. Incoming power is monitored for an out-oftolerance condition. When such a condition is detected, the chip enables are inhibited to accom

文件：14.1 Kbytes 页数：1 Pages

Dallas