OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

METAL GATE RF SILICON FET

文件：16.16 Kbytes 页数：2 Pages

SEME-LAB

12-Bit, uP Compatible, Double-Buffered D to A Converters

文件：361.79 Kbytes 页数：18 Pages

NSC

国半

12-Bit, uP Compatible, Double-Buffered D to A Converters

文件：361.79 Kbytes 页数：18 Pages

NSC

国半

Integrated Circuit Preamp w/ALC

Description: The NTE1210 is a low–noise, high–gain preamplifier with a built–in ALC (automatic level control) circuit in a 9–Lead SIP type package designed for use as a record/playback preamp in cassette tape recorders. Features: • Wide ALC Range • Wide Range of Working Power Supply

文件：20.44 Kbytes 页数：2 Pages

NTE