METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • USEFUL PO AT 1GHz • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1

文件：15.48 Kbytes 页数：2 Pages

SEME-LAB

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

Monolithic Microprocessor-Compatible 12-Bit Resolution DIGITAL-TO-ANALOG CONVERTER

文件：322.65 Kbytes 页数：6 Pages

TI

德州仪器

MONOLITHIC MICROPROCESSOR-COMPATIBLE 12 BIT RESOLUTIION DIGITAL-TO-ANALOG CONVERTER

文件：314.23 Kbytes 页数：7 Pages

TI

德州仪器

Surface Mount Type/ High-output IRED for Automotive

文件：308.42 Kbytes 页数：12 Pages

STANLEY

STANLEY ELECTRIC CO.,LTD.