METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • USEFUL PO AT 1GHz • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 1 GH

文件：49.86 Kbytes 页数：4 Pages

SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Useful P(o) at 1 GHz\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

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文件：317.44 Kbytes 页数：16 Pages

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