METAL GATE RF SILICON FET

FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz

文件：43.32 Kbytes 页数：4 Pages

SEME-LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes 页数：22 Pages

NSC

国半

DOUBLE-BUFFERED D TO A CONVERTERS

文件：854.89 Kbytes 页数：23 Pages

NSC

国半

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes 页数：22 Pages

NSC

国半