Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Useful P(o) at 1 GHz\n• Low noise\n• High gain - 13 dB minimum;

TT Electronics

METAL GATE RF SILICON FET

文件：50.95 Kbytes 页数：4 Pages

SEME-LAB

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes 页数：22 Pages

NSC

国半

DOUBLE-BUFFERED D TO A CONVERTERS

文件：854.89 Kbytes 页数：23 Pages

NSC

国半

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes 页数：22 Pages

NSC

国半