Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 16 dB minimum;

TT Electronics

旋转位置传感器

Honeywell

霍尼韦尔

METAL GATE RF SILICON FET

文件：39.78 Kbytes 页数：4 Pages

SEME-LAB

Seme LAB

Thyristors

文件：243.07 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Phase Control Thyristor

FEATURES ■ Double Side Cooling ■ High Surge Capability ■ Low Turn-on Losses APPLICATIONS ■ High Power Converters ■ High Voltage Power Supplies ■ DC Motor Control

文件：115.3 Kbytes 页数：8 Pages

Dynex

HALF-BRIDGE GATE DRIVER IN V-DFN3035-8

Features Floating High-Side Driver in Bootstrap Operation to 150V Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuration 290mA Source/600mA Sink Output Current Capability Outputs Tolerant to Negative Transients Internal Dead Time of 420ns to Protect MOSFETs Wide Low Side Gate

文件：767.55 Kbytes 页数：11 Pages

DIODES

美台半导体