METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to

文件：41.1 Kbytes 页数：4 Pages

SEME-LAB

Seme LAB

Ceramic Singlelayer DC Disc Capacitors For General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

文件：123.29 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 16 dB minimum;

TT Electronics

DOUBLE-BUFFERED D TO A CONVERTERS

文件：854.89 Kbytes 页数：23 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

DOUBLE-BUFFERED D TO A CONVERTERS

文件：854.89 Kbytes 页数：23 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

DOUBLE-BUFFERED D TO A CONVERTERS

文件：854.89 Kbytes 页数：23 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司