丝印：D08；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 页数：38 Pages

Microchip

微芯科技

NPN SILICON TRANSISTOR

13001 Transistor Chip Manual █ Introduction to the chip Chip size: 4 inches (100mm) Chip code: D083AJ-00 Chip thickness: 240±20µm Die size: 830×830µm 2 Welding position size: B pole 140×144µm 2 and E pole 180×140µm 2 Electrode metal: aluminum Back metal: gold

文件：27.99 Kbytes 页数：1 Pages

Huashan

华汕电子器件

ALUMINUM NITRIDE

Features: ♦ Aluminum Nitride Material ♦ DC - 2.5 GHz Performance ♦ 250 Watt Input Power ♦ Solder Mountable General Description: The D08Z-50R0J2T-04C36-X is a leaded, 50 ohm Aluminum Nitride termination. It has an input power of 250 watts, while maintaining a constant mounting surface tempe

文件：134.57 Kbytes 页数：1 Pages

BARRY

Vishay Barry

BeO

Features: ♦ BeO Material ♦ DC - 4 GHz Performance ♦ 250 Watt Input Power ♦ Solder Mountable General Description: The D08Z-50R0J99-00C36-X is a leaded 50 ohm, BeO termination. It has an input power of 250 watts max, while maintaining a constant mounting surface temperature of 100oC. It o

文件：159.88 Kbytes 页数：1 Pages

BARRY

Vishay Barry

Raychem S200 Shield Terminators

文件：637.29 Kbytes 页数：2 Pages

TEC

泰科电子

Label format - Old format order code cross reference

文件：3.00256 Mbytes 页数：48 Pages

MACOM

Heat-Shrink/Cable Markers

文件：239.54 Kbytes 页数：2 Pages

MACOM

7mm Series Metal Oxide Varistors

文件：420.68 Kbytes 页数：10 Pages

MACOM

丝印：D0865C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC??650V SiC Schottky Diode

6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation ч ҙGчҚ is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal sys

文件：680.09 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：D085N03M；Package：PDFN3333-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TFD085N03M uses advanced trench technology to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature VDS =30V , ID =25A RDS(

文件：3.15505 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体