丝印：D0865C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC??650V SiC Schottky Diode

6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation ч ҙGчҚ is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal sys

文件：680.09 Kbytes 页数：9 Pages

Infineon

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Power-Silicon Carbide (SiC)-CoolSiC™ Schottky Diode-

Infineon Technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650V G6 is comb • Offers best-in-class VF and FOM Qc x VF \n• Improved dv/dt ruggedness\n• Easy and effective match with CoolMOS™ 7 SJ MOSFET families\n• Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits\n• Reduced parasitic source inductance improves e iciency and ease-of-use\n• E;

Infineon

英飞凌

Package：10-PowerSOP 模块；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC DIODES

Infineon

英飞凌

6th Generation CoolSiC?

文件：1.01448 Mbytes 页数：10 Pages

Infineon

英飞凌