PESDNC2FD7VB

Marking：D07；Package：DFN1006-2；I-Line Bi-directional TVS Diode

Features ®Ultrasmallpackage:1.0x0.6x0.5mm @Ultralowcapacitance:20pFmax ©Ultralowleakage:nAlevel ®Lowoperatingvoltage:+7V. ®Lowclampingvoltage ®2-pinleadlesspackage ®Complieswithfollowingstandards: @—IEC61000-4-2(ESD)immunitytest Airdischa

RT9193-31GB

Marking：D0=***；Package：SOT-25；300mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator

GeneralDescription TheRT9193isdesignedforportableRFandwirelessapplicationswithdemandingperformanceandspacerequirements.TheRT9193performanceisoptimizedforbattery-poweredsystemstodeliverultralownoiseand lowquiescentcurrent.Anoisebypasspinisavailableforfu

RT9193-31PB

Marking：D0-***；Package：SOT-25；300mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator

GeneralDescription TheRT9193isdesignedforportableRFandwirelessapplicationswithdemandingperformanceandspacerequirements.TheRT9193performanceisoptimizedforbattery-poweredsystemstodeliverultralownoiseand lowquiescentcurrent.Anoisebypasspinisavailableforfu

SD05C

Marking：D05C；Package：SOD-323；TVS ARRAY

350Wattspeakpulsepower(tp=8/20μs) Transientprotectionfordatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)24A(8/20μs) Smallpackageforuseinportableelectronics SuitablereplacementforMLV’sinESDprotect

TFD085N03M

Marking：D085N03M；Package：PDFN3333-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheTFD085N03Musesadvancedtrenchtechnologytoprovi deexcellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. GeneralFeature VDS=30V,ID=25A RDS(

TPS3423GAMDHADRLR

Marking：D0001；Package：SOT-5X3；TPS3423, TPS3424, Nano-Power, Push-Button Controllers With Configurable Delay to Enable Battery Freshness Seal

1Features •Operatingvoltagerange:1Vto6V •Nanosupplycurrent:18nA(typical) •HBMESDratingonpush-buttonpin:±8kV •Programmableshortpressandlongpressduration –TPS3423,TPS3424fixedtimingoptions: •Shortpressduration:50msecto13sec •Longpressduration:1secto3

D5V0S1UN2LP1610-7

Marking：D01；1 CHANNEL HIGH SURGE TVS DIODE

DD020PG

Marking：D020P；Package：TO-252；P-Channel MOSFET uses advanced trench technology

ETA5051V30S2F

Marking：d0YW；Package：SOT23-5；80dB PSRR, Low Noise, RF, 300mA LDO in SOT23-5

MIC2003-0.5YML-TR

Marking：D05；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches