DGD0216WT-7

Marking：D0216；Package：TSOT25；1.9A HIGH SPEED SINGLE GATE DRIVER

Features EfficientLowCostSolutionforDrivingMOSFETsandIGBTs WideSupplyVoltageOperatingRange:4.5Vto18V 1.9ASource/1.8ASinkOutputCurrentCapability InvertingandNon-InvertingInputConfigurations FastPropagationDelay(35nstyp) FastRiseandFallTimes(15nstyp) Logic

DGD0280WT-7

Marking：D0280；Package：TSOT25；HIGH SPEED LOW SIDE SINGLE GATE DRIVER WITH LDO

Features EfficientLowCostSolutionforDrivingMOSFETsandIGBTs IntegratedLDO(3.3V,15mAOutput) 3.3VLDOat1Accuracyat25°C WideSupplyVoltageOperatingRange:4.5Vto18V 2.5ASource/2.8ASinkOutputCurrentCapability UndervoltageLockoutforVccSupply FastPropagationDelay

DGD0280WTQ-7

Marking：D0280；Package：TSOT25；AUTOMOTIVE LOW SIDE SINGLE GATE DRIVER WITH LDO

Features -EfficientLowCostSolutionforDrivingMOSFETsandIGBTs -IntegratedLDO(3.3V,15mAOutput) -3.3VLDOat1Accuracyat+25°C -WideSupplyVoltageOperatingRange:4.5Vto18V -2.5ASource/2.8ASinkOutputCurrentCapability -UndervoltageLockoutforVccSupply -FastPro

IDD06E60

Marking：D06E60；Package：PG-TO252-3；Fast Switching Emitter Controlled Diode

Feature •600VEmitterControlledtechnology •Fastrecovery •Softswitching Lowreverserecoverycharge •Lowforwardvoltage •175°Coperatingtemperature •Easyparalleling •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC)fortargetapplications

IDDD04G65C6

Marking：D0465C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC™ 650V SiC Schottky Diode

Features Bestinclassforwardvoltage(1.25V) Bestinclassfigureofmerit(QcxVF) Highdv/dtruggedness(150V/ns) Benefits Systemefficiencyimprovement Systemcostandsizesavingsduetothereducedcoolingrequirements Enablinghigherfrequencyandincreasedpowerde

IDDD06G65C6

Marking：D0665C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC™ 650V SiC Schottky Diode

Features Bestinclassforwardvoltage(1.25V) Bestinclassfigureofmerit(QcxVF) Highdv/dtruggedness(150V/ns) Benefits Systemefficiencyimprovement Systemcostandsizesavingsduetothereducedcoolingrequirements Enablinghigherfrequencyandincreasedpowerde

IDDD08G65C6

Marking：D0865C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC??650V SiC Schottky Diode

6thGenerationCoolSiC™650VSiCSchottkyDiode TheCoolSiC™generationчҙGчҚistheleadingedgetechnologyfromInfineonfortheSiCSchottkybarrierdiodes.TheInfineonproprietaryinnovativeG5technologywasenhancedinG6byintroducingfurtheradvancementslikeanovelSchottkymetalsys

IDH02G120C5

Marking：D0212C5；Package：PG-TO220-2-1；Silicon Carbide Schottky Diode

Features: Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/Noforwardrecovery Temperatureindependentswitchingbehavior Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

IDK02G120C5

Marking：D0212C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Features Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/noforwardrecovery Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 

IDK05G120C5

Marking：D0512C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features Revolutionarysemiconductormaterial-SiliconCarbide Noreverserecoverycurrent/noforwardrecovery Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Excellentthermalperformance 