丝印：CZT；Package：DO-214AC；400W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.2336 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：CZT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：CZT31C；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Complementary to CZT32C Power amplifier applications up to 3.0 amps.

文件：1.76426 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：CZT32C；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Complementary to CZT31C Power amplifier applications up to 3.0 amps.

文件：1.71604 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：CZT31C；Package：SOT-223；NPN Silicon Medium Power Transistor

文件：251.2 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：CZT32C；Package：SOT-223；PNP Silicon Medium Power Transistor

文件：342.57 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：CZT31C；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Complementary to CZT32C Power amplifier applications up to 3.0 amps.

文件：1.76426 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：CZT32C；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

FEATURES Complementary to CZT31C Power amplifier applications up to 3.0 amps.

文件：1.71604 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：CZT31C；Package：SOT-223；NPN Silicon Medium Power Transistor

文件：251.2 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：CZT32C；Package：SOT-223；PNP Silicon Medium Power Transistor

文件：342.57 Kbytes 页数：2 Pages

SECOS

喜可士