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CY7C25652KV18

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

文件:496.67 Kbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C25652KV18-400BZC

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

文件:496.32 Kbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C25652KV18-400BZI

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

文件:496.32 Kbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C25652KV18-400BZXC

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

文件:496.32 Kbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C25652KV18-400BZXI

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

文件:496.32 Kbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C25652KV18-450BZC

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

文件:496.32 Kbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C25652KV18-450BZI

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

文件:496.32 Kbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C25652KV18-450BZXC

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

文件:496.32 Kbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C25652KV18-500BZC

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

文件:496.32 Kbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C25652KV18-500BZI

72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

文件:496.32 Kbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

技术参数

  • 合格汽车:

  • 突发长度(字):

    4

  • 密度 (Kb):

    73728

  • Density (Mb):

    72

  • 频率 (MHz):

    400

  • 最高工作温度 (°C):

    70

  • Max. Operating VCCQ (V):

    1.90

  • 最高工作电压 (V):

    1.90

  • 最低工作温度 (°C):

    0

  • Min. Operating VCCQ (V):

    1.40

  • 最低工作电压 (V):

    1.70

  • 组织 (X x Y):

    2Mb x 36

  • Part Family:

    QDR-II+

  • Tape & Reel:

  • 温度分类:

    商用

供应商型号品牌批号封装库存备注价格
Cypress
165-FBGA
1200
Cypress一级分销,原装原盒原包装!
询价
CYPRESS
17+
NA
9988
全新原装现货,请联系18721787578唐先生
询价
CY
23+
NA
3200
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
询价
DEI
24+
SMD
1680
一级代理原装进口现货
询价
Cypress
23+
FBGA
8650
受权代理!全新原装现货特价热卖!
询价
CYPRESS
25+23+
BGA
23127
绝对原装正品全新进口深圳现货
询价
CYPRESS
17+
BGA
60000
保证进口原装可开17%增值税发票
询价
CYPRESS
24+
BGA
90000
进口原装现货假一罚十价格合理
询价
CypressSemiconductorCorp
19+
68000
原装正品价格优势
询价
CYPRESS
ROHS+Original
NA
1221
专业电子元器件供应链/QQ 350053121 /正纳电子
询价
更多CY7C25652KV18供应商 更新时间2025-10-8 10:20:00