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型号	下载订购	功能描述	制造商上传企业	LOGO
CY7C25632KV18	文件：496.32 Kbytes Page：31 Pages	72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has 文件：496.32 Kbytes 页数：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C25632KV18	文件：496.67 Kbytes Page：31 Pages	72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 文件：496.67 Kbytes 页数：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C25632KV18	文件：300 bytes Page：1 Pages	72-Mbit QDR® II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT	Infineon 英飞凌	Infineon
CY7C25632KV18-400BZC	文件：496.32 Kbytes Page：31 Pages	72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has 文件：496.32 Kbytes 页数：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C25632KV18-400BZXI	文件：496.32 Kbytes Page：31 Pages	72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has 文件：496.32 Kbytes 页数：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C25632KV18-450BZC	文件：496.32 Kbytes Page：31 Pages	72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has 文件：496.32 Kbytes 页数：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C25632KV18-450BZXI	文件：496.32 Kbytes Page：31 Pages	72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has 文件：496.32 Kbytes 页数：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C25632KV18-500BZC	文件：496.32 Kbytes Page：31 Pages	72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has 文件：496.32 Kbytes 页数：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C25632KV18-500BZXC	文件：496.32 Kbytes Page：31 Pages	72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has 文件：496.32 Kbytes 页数：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C25632KV18-500BZXI	文件：496.32 Kbytes Page：31 Pages	72-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Functional Description The CY7C25632KV18 and CY7C25652KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has 文件：496.32 Kbytes 页数：31 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

技术参数

合格汽车：
否
突发长度（字）：
4
密度 (Kb)：
73728
Density (Mb)：
72
频率 (MHz)：
400
最高工作温度 (°C)：
70
Max. Operating VCCQ (V)：
1.90
最高工作电压 (V)：
1.90
最低工作温度 (°C)：
0
Min. Operating VCCQ (V)：
1.40
最低工作电压 (V)：
1.70
组织 (X x Y)：
4Mb x 18
Part Family：
QDR-II+
Tape & Reel：
否
温度分类：
商用

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市卓越微芯电子有限公司	CY7C25632KV18-550BZXI	CYPRESS	25+	BGA	570	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市毅创腾电子科技有限公司	CY7C25632KV18-550BZXI	Cypress		165-FBGA	2870	Cypress一级分销,原装原盒原包装!	询价
深圳市正迈科技有限公司	CY7C25632KV18-550BZC	CYPRESS	23+	NA	1200	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价
深圳市昊创电子有限公司	CY7C25632KV18-550BZC	CypressSemiconductorCorp	19+		68000	原装正品价格优势	询价
瑞航达科技(深圳)有限公司	CY7C25632KV18-400BZXI	CYPRESS	19+		565	原装正品	询价
中天科工半导体（深圳）有限公司	CY7C25632KV18-400BZXI	Cypress	20+	原装	65790	原装优势主营型号-可开原型号增税票	询价
深圳市正纳电子有限公司	CY7C25632KV18-550BZXI	CYPRESS	ROHS+Original	NA	1221	专业电子元器件供应链/QQ 350053121 /正纳电子	询价
深圳市斌腾达科技有限公司	CY7C25632KV18-500BZC	Cypress Semiconductor Corp	21+	208-LFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市拓亿芯电子有限公司	CY7C25632KV18-500BZXC	CYPRESS/赛普拉斯	25+	BGA	25000	代理原装现货,假一赔十	询价
瀚佳科技(深圳)有限公司	CY7C25632KV18-550BZXI	CYPRESS	24+	BGA	9860	全新原装现货/假一罚百!	询价

更多CY7C25632KV18供应商更新时间2025-12-1 8:22:00

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