144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)

Functional Description The CY7C1648KV18, and CY7C1650KV18 are 1.8-V synchronous pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Features ■ 144-Mbit density (8 M × 18, 4 M × 36) ■ 450-MHz clock for high ban

文件：783.79 Kbytes 页数：29 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)

Functional Description The CY7C1648KV18, and CY7C1650KV18 are 1.8-V synchronous pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Features ■ 144-Mbit density (8 M × 18, 4 M × 36) ■ 450-MHz clock for high ban

文件：783.79 Kbytes 页数：29 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)

文件：857.34 Kbytes 页数：30 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)

文件：857.34 Kbytes 页数：30 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

DDR-II+ CIO

Infineon

英飞凌

Package：165-LBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 144MBIT PARALLEL 165FBGA

Cypress Semiconductor Corp

Package：165-LBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 144MBIT PARALLEL 165FBGA

Cypress Semiconductor Corp