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CY7C1362B

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-166AC

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-166AI

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-166AJC

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-166AJI

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-166BGC

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-166BZC

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-166BZI

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-200AC

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1362B-200AI

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件:895.48 Kbytes 页数:34 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

技术参数

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步

  • 存储容量:

    9Mb (512K x 18)

  • 时钟频率:

    166MHz

  • 访问时间:

    3.5ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    3.135V ~ 3.6V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    100-LQFP

  • 供应商器件封装:

    100-TQFP(14x20)

供应商型号品牌批号封装库存备注价格
Cypress
23+
100-LQFP(14x20)
39257
专业分销产品!原装正品!价格优势!
询价
CY
24+
QFP
50
询价
CYPRESS
2015+
QFP
19889
一级代理原装现货,特价热卖!
询价
CYRESS
24+
TQFP
6980
原装现货,可开13%税票
询价
CYPRESS
23+
QFP
8650
受权代理!全新原装现货特价热卖!
询价
Cypress Semiconductor Corp
21+
256-LBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
Cypress Semiconductor Corp
24+
100-TQFP(14x20)
56200
一级代理/放心采购
询价
CYPRESS/赛普拉斯
23+
NA
1218
原装正品代理渠道价格优势
询价
CYPRESS/赛普拉斯
2447
QFP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
CYPRESS
25+
BGA-119
1001
就找我吧!--邀您体验愉快问购元件!
询价
更多CY7C1362B供应商 更新时间2025-12-18 16:31:00