9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件：423.79 Kbytes 页数：31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

文件：521.48 Kbytes 页数：31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件：423.79 Kbytes 页数：31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件：423.79 Kbytes 页数：31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件：423.79 Kbytes 页数：31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件：423.79 Kbytes 页数：31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件：423.79 Kbytes 页数：31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件：423.79 Kbytes 页数：31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件：423.79 Kbytes 页数：31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

9-Mbit (256K x 36/512K x 18) Pipelined SRAM

Functional Description The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock

文件：423.79 Kbytes 页数：31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司