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CY7C1357B

9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

Functional Description[1] The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No B

文件:560.17 Kbytes 页数:33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1357B-100AC

9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

Functional Description[1] The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No B

文件:560.17 Kbytes 页数:33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1357B-100AI

9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

Functional Description[1] The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No B

文件:560.17 Kbytes 页数:33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1357B-100BGC

9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

Functional Description[1] The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No B

文件:560.17 Kbytes 页数:33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1357B-100BGI

9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

Functional Description[1] The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No B

文件:560.17 Kbytes 页数:33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1357B-117AC

9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

Functional Description[1] The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No B

文件:560.17 Kbytes 页数:33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1357B-117AI

9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

Functional Description[1] The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No B

文件:560.17 Kbytes 页数:33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1357B-117BGC

9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

Functional Description[1] The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No B

文件:560.17 Kbytes 页数:33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1357B-117BGI

9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

Functional Description[1] The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No B

文件:560.17 Kbytes 页数:33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1357B-117BZC

9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture

Functional Description[1] The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No B

文件:560.17 Kbytes 页数:33 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

详细参数

  • 型号:

    CY7C1357B

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    8M- 512KX18 3.3V FLOW-THROUGH-NOBL SRAM - Bulk

供应商型号品牌批号封装库存备注价格
CY
24+
QFP
213
询价
CYRESS?
23+
TQFP
2800
绝对全新原装!现货!特价!请放心订购!
询价
CYRESS
24+
TQFP
6980
原装现货,可开13%税票
询价
CYPRESS
20+
TQFP100
500
样品可出,优势库存欢迎实单
询价
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货
询价
CYPRESS/赛普拉斯
23+
QFP
50000
全新原装正品现货,支持订货
询价
Cypress(赛普拉斯)
21+
QFP
30000
只做原装,质量保证
询价
CYPRESS/赛普拉斯
23+
QFP100
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Cypress(赛普拉斯)
23+
标准封装
6000
正规渠道,只有原装!
询价
CYPRESS/赛普拉斯
22+
QFP
20000
原装现货,实单支持
询价
更多CY7C1357B供应商 更新时间2026-1-28 16:30:00