首页 >CY7C1361A-100BGC>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CY7C1361A-100BGC | 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 6.0, 6.5 文件:818.24 Kbytes 页数:26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | |
256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 6.0, 6.5 文件:818.24 Kbytes 页数:26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 6.0, 6.5 文件:818.24 Kbytes 页数:26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 6.0, 6.5 文件:818.24 Kbytes 页数:26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress | ||
256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. Features • Fast access times: 6.0, 6.5 文件:818.24 Kbytes 页数:26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | Cypress |
详细参数
- 型号:
CY7C1361A-100BGC
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
- 制造商:
Cypress Semiconductor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Cypress |
BGA |
1520 |
Cypress一级分销,原装原盒原包装! |
询价 | |||
CYPRESS |
2138+ |
BGA |
8960 |
专营BGA,QFP原装现货,假一赔十 |
询价 | ||
CYPRESS(赛普拉斯) |
24+ |
BGA119 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
CYPRESS |
2023+ |
BGA |
50000 |
原装现货 |
询价 | ||
CY |
311 |
PQFP100 |
1120 |
全新原装绝对自己公司现货特价! |
询价 | ||
CYPRESS |
05+ |
QFP |
111 |
询价 | |||
CYRESS |
24+ |
TQFP |
6980 |
原装现货,可开13%税票 |
询价 | ||
24+ |
N/A |
54000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
CYPRESS |
24+ |
TQFP |
160 |
询价 | |||
CYPRESS |
2001 |
TQFP |
160 |
原装现货海量库存欢迎咨询 |
询价 |
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