CY7C1361A-100BGI中文资料赛普拉斯数据手册PDF规格书

Functional Description

The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors.

特性 Features

• Fast access times: 6.0, 6.5, 7.0, and 8.0ns

• Fast clock speed: 150, 133, 117, and 100MHz

• Fast OE access times: 3.5 ns and 4.0 ns

• Optimal for depth expansion (one cycle chip deselect to eliminate bus contention)

• 3.3V –5 and +10 power supply

• 3.3V or 2.5V I/O supply

• 5V tolerant inputs except I/Os

• Clamp diodes to VSS at all inputs and outputs

• Common data inputs and data outputs

• Byte Write Enable and Global Write control

• Multiple chip enables for depth expansion: A package version and two chip enables for BG and AJ package versions

• Address pipeline capability

• Address, data, and control registers

• Internally self-timed Write cycle

• Burst control pins (interleaved or linear burst sequence)

• Automatic power-down feature available using ZZ mode or CE deselect.

• JTAG boundary scan for BG and AJ package version

• Low-profile 119-bump 14-mm × 22-mm PBGA (Ball Grid Array) and 100-pin TQFP packages