4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture

4-Mbit (256K x 18) Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Byte Write capability • 256K x 18 common I/O architecture • 3.3V core power supp

文件：223.55 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture

4-Mbit (256K x 18) Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Byte Write capability • 256K x 18 common I/O architecture • 3.3V core power supp

文件：223.55 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture

4-Mbit (256K x 18) Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Byte Write capability • 256K x 18 common I/O architecture • 3.3V core power supp

文件：223.55 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture

4-Mbit (256K x 18) Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Byte Write capability • 256K x 18 common I/O architecture • 3.3V core power supp

文件：223.55 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture

4-Mbit (256K x 18) Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Byte Write capability • 256K x 18 common I/O architecture • 3.3V core power supp

文件：223.55 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture

4-Mbit (256K x 18) Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Byte Write capability • 256K x 18 common I/O architecture • 3.3V core power supp

文件：223.55 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture

4-Mbit (256K x 18) Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Byte Write capability • 256K x 18 common I/O architecture • 3.3V core power supp

文件：223.55 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture

4-Mbit (256K x 18) Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Byte Write capability • 256K x 18 common I/O architecture • 3.3V core power supp

文件：223.55 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture

4-Mbit (256K x 18) Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Byte Write capability • 256K x 18 common I/O architecture • 3.3V core power supp

文件：223.55 Kbytes 页数：13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 18) Pipelined SRAM with NoBL??Architecture

文件：330.48 Kbytes 页数：12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司