512K x 8 MoBL Static RAM

Functional Description The CY62148V is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW (max.) • Low standby power (Commercial LL version) — 54 µW (max.) • Automatic p

文件：189.01 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

文件：189.15 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

• 4.5V−5.5V operation\n• CMOS for optimum speed/power\n• Low active power\n   — 660 mW (max.)\n• Low standby power (L version)\n   — 2.75 mW (max.)\n• Automatic power-down when deselected\n• TTL-compatible inputs and outputs\n• Easy memory expansion with CE and OE options;

Infineon

英飞凌

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

文件：189.15 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

文件：189.15 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

文件：189.15 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

文件：189.15 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 MoBL Static RAM

Functional Description The CY62148V is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW (max.) • Low standby power (Commercial LL version) — 54 µW (max.) • Automatic p

文件：189.01 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options

文件：189.15 Kbytes 页数：7 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512K x 8) Static RAM

Functional Description The CY62148BN is a high-performance CMOS static RAM organized as 512K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that reduce

文件：525.8 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司