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CY15V104QI

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

文件:362.79 Kbytes 页数:39 Pages

INFINEON

英飞凌

CY15V104QI-20BFXI

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

文件:362.79 Kbytes 页数:39 Pages

INFINEON

英飞凌

CY15V104QI-20BFXIT

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

文件:362.79 Kbytes 页数:39 Pages

INFINEON

英飞凌

CY15V104QI-20LPXC

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

文件:362.79 Kbytes 页数:39 Pages

INFINEON

英飞凌

CY15V104QI-20LPXCT

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

文件:362.79 Kbytes 页数:39 Pages

INFINEON

英飞凌

CY15V104QI-20LPXI

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

文件:362.79 Kbytes 页数:39 Pages

INFINEON

英飞凌

CY15V104QI-20LPXIT

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

文件:362.79 Kbytes 页数:39 Pages

INFINEON

英飞凌

CY15V104QI-20BFXIT

EXCELON™ F-RAM

Infineon

英飞凌

CY15V104QI-20LPXC

F-RAM(铁电RAM)

Infineon

英飞凌

CY15V104QI-20LPXCT

F-RAM(铁电RAM)

Infineon

英飞凌

技术参数

  • Peak Reflow Temp:

    260 °C

  • Operating Temperature:

    -40 °C to 85 °C

  • Operating Voltage:

    1.71 V to 1.89 V

  • Lead Ball Finish:

    Ni/Au

  • Interfaces:

    SPI

  • Family:

    Excelon

  • Organization (X x Y):

    512Kb x 8

  • Qualification:

    Industrial

  • Frequency:

    20 MHz

供应商型号品牌批号封装库存备注价格
SPANSION(飞索)
2447
GQFN-8(3.23x3.28)
315000
490个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
SPANSION(飞索)
2021+
GQFN-8(3.23x3.28)
499
询价
INFINEON/英飞凌
23+
PG-VQFN-8
28611
为终端用户提供优质元器件
询价
Cypress
24+
N/A
294
原装原装原装
询价
Cypress
25+
30000
原装现货,支持实单
询价
24+
N/A
61000
一级代理-主营优势-实惠价格-不悔选择
询价
Cypress Semiconductor Corp
25+
8-UQFN
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
CYPRESS
24+
con
10000
查现货到京北通宇商城
询价
Cypress Semiconductor/赛普拉斯
两年内
NA
425
实单价格可谈
询价
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
更多CY15V104QI供应商 更新时间2026-1-31 15:01:00