4 Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (Quad SPI), 512K × 8, 108 MHz, Automotive grade 1

Features • 4 Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 98) - Infineon instant non-volatile write technology - Advan

文件：1.10587 Mbytes 页数：118 Pages

INFINEON

英飞凌

4 Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (Quad SPI), 512K × 8, 108 MHz, Automotive grade 1

Features • 4 Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 98) - Infineon instant non-volatile write technology - Advan

文件：1.10587 Mbytes 页数：118 Pages

INFINEON

英飞凌

4 Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (Quad SPI), 512K × 8, 108 MHz, Automotive grade 1

Features • 4 Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 98) - Infineon instant non-volatile write technology - Advan

文件：1.10587 Mbytes 页数：118 Pages

INFINEON

英飞凌

4Mb 3.0V 汽车级 108MHz QSPI EXCELON ™ F-RAM，8 引脚 SOIC

EXCELON™ Auto F-RAM CY15B204QSN-108SXE is a high-performance, AEC-Q100 qualified 4-Mbit non-volatile memory, designed for high-reliability automotive applications with temperature support up to +125 °C. Equipped with high-speed, low-pin-count QSPI interface, it offers read/write bandwidth up to 432- • 4-Mbit F-RAM organized as 512K × 8\n• 10 trillion (1013) read/write cycles\n• Instant non-volatility\n• 108-MHz Quad SPI bus (SDR)\n• Operating voltage: 1.8V to 3.6V\n• 121 years of data retention at +85°C\n• Operating temperature: –40°C to +125°C\n• Execute-in-place (XIP)\n• Dedicated 256-byte sp;

Infineon

英飞凌

4Mb 3.0V 汽车级 108MHz QSPI EXCELON ™ F-RAM，8 引脚 SOIC

EXCELON ™ Auto F-RAM CY15B204QSN-108SXE 是一款高性能、符合 AEC-Q100 标准的 4 Mbit 非易失性存储器，专为高可靠性汽车应用而设计，支持高达 +125°C 的温度。配备高速、低引脚数 QSPI 接口，可提供高达 432 Mbits/s 的读/写带宽。与串行闪存不同，它以总线速度执行写入操作，确保没有写入延迟并提供几乎无限的写入耐久性。 • 4 Mbit F-RAM，组织为 512K × 8\n• 即时非波动性\n• 工作电压：1.8V至3.6V\n• 工作温度：-40°C 至 +125°C\n• 专用的 256 字节特殊扇区 F-RAM\n• 符合 ISO-26262 FuSa 标准;

Infineon

英飞凌