首页 >CY15B108QN>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CY15B108QN | 8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi 文件:449.3 Kbytes 页数:41 Pages | INFINEON 英飞凌 | INFINEON | |
CY15B108QN | 8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h 文件:360.61 Kbytes 页数:36 Pages | INFINEON 英飞凌 | INFINEON | |
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 50 MHz, extended industrial Features • 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced h 文件:360.61 Kbytes 页数:36 Pages | INFINEON 英飞凌 | INFINEON | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi 文件:449.3 Kbytes 页数:41 Pages | INFINEON 英飞凌 | INFINEON | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi 文件:449.3 Kbytes 页数:41 Pages | INFINEON 英飞凌 | INFINEON | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi 文件:449.3 Kbytes 页数:41 Pages | INFINEON 英飞凌 | INFINEON | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi 文件:449.3 Kbytes 页数:41 Pages | INFINEON 英飞凌 | INFINEON | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi 文件:449.3 Kbytes 页数:41 Pages | INFINEON 英飞凌 | INFINEON | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi 文件:449.3 Kbytes 页数:41 Pages | INFINEON 英飞凌 | INFINEON | ||
8Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 1024K × 8, 40 MHz, industrial Features • 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced hi 文件:449.3 Kbytes 页数:41 Pages | INFINEON 英飞凌 | INFINEON |
技术参数
- 密度 (Kb):
8192
- 频率 (MHz):
20
- 接口:
SPI
- 最高工作温度 (°C):
70
- Max. Operating VCCQ (V):
3.60
- 最高工作电压 (V):
3.60
- 最低工作温度 (°C):
0
- Min. Operating VCCQ (V):
1.80
- 最低工作电压 (V):
1.80
- 组织 (X x Y):
1Mb x 8
- Part Family:
Serial FRAM
- 速率 (ns):
0
- Tape & Reel:
否
- 温度分类:
商用
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SPANSION(飞索) |
2447 |
GQFN-8(3.23x3.28) |
315000 |
490个/托盘一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
SPANSION(飞索) |
2021+ |
GQFN-8(3.23x3.28) |
499 |
询价 | |||
Cypress(赛普拉斯) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
Cypress(赛普拉斯) |
21+ |
SOIC-8 |
30000 |
只做原装,质量保证 |
询价 | ||
CYPRESS/赛普拉斯 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
CYPRESS |
19+ |
SOIC-8 |
42 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Cypress(赛普拉斯) |
23+ |
标准封装 |
6000 |
正规渠道,只有原装! |
询价 | ||
INFINEON/英飞凌 |
23+ |
PG-BGA-24 |
28611 |
为终端用户提供优质元器件 |
询价 | ||
CYPRESS/赛普拉斯 |
2023+ |
SOIC-8 |
50000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
Infineon Technologies |
25+ |
30000 |
原装现货,支持实单 |
询价 |
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