CY15B104QN说明书PDF资料供应代理英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CY15B104QN	文件：596.67 Kbytes Page：42 Pages	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv 文件：596.67 Kbytes 页数：42 Pages	INFINEON 英飞凌	INFINEON
CY15B104QN	文件：574.73 Kbytes Page：36 Pages	4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan 文件：574.73 Kbytes 页数：36 Pages	INFINEON 英飞凌	INFINEON
CY15B104QN_V01	文件：574.73 Kbytes Page：36 Pages	4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan 文件：574.73 Kbytes 页数：36 Pages	INFINEON 英飞凌	INFINEON
CY15B104QN-20BFXI	文件：596.67 Kbytes Page：42 Pages	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv 文件：596.67 Kbytes 页数：42 Pages	INFINEON 英飞凌	INFINEON
CY15B104QN-20BFXIT	文件：596.67 Kbytes Page：42 Pages	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv 文件：596.67 Kbytes 页数：42 Pages	INFINEON 英飞凌	INFINEON
CY15B104QN-20LPXC	文件：596.67 Kbytes Page：42 Pages	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv 文件：596.67 Kbytes 页数：42 Pages	INFINEON 英飞凌	INFINEON
CY15B104QN-20LPXCT	文件：596.67 Kbytes Page：42 Pages	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv 文件：596.67 Kbytes 页数：42 Pages	INFINEON 英飞凌	INFINEON
CY15B104QN-20LPXI	文件：596.67 Kbytes Page：42 Pages	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv 文件：596.67 Kbytes 页数：42 Pages	INFINEON 英飞凌	INFINEON
CY15B104QN-20LPXIT	文件：596.67 Kbytes Page：42 Pages	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv 文件：596.67 Kbytes 页数：42 Pages	INFINEON 英飞凌	INFINEON
CY15B104QN-50BFXI	文件：596.67 Kbytes Page：42 Pages	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv 文件：596.67 Kbytes 页数：42 Pages	INFINEON 英飞凌	INFINEON

技术参数

Peak Reflow Temp：
260 °C
Operating Temperature：
-40 °C to 80 °C
Operating Voltage：
1.8 V to 3.6 V
Lead Ball Finish：
Ni/Au
Interfaces：
SPI
Family：
Excelon
Organization (X x Y)：
512Kb x 8
Currently planned availability until at least：
2033
Qualification：
Industrial
Frequency：
20 MHz

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市华睿芯科技有限公司	CY15B104QN-50SXI	Cypress	24+	N/A	16500	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
瀚佳科技(深圳)有限公司	CY15B104QN-50SXIES	CYPRESS/赛普拉斯	24+		65210		询价
艾睿（深圳）半导体有限公司	CY15B104QN-20LPXC	SPANSION(飞索)	2447	GQFN-8(3.23x3.28)	315000	490个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
讯运(深圳/上海)电子有限公司	CY15B104QN-20LPXC	SPANSION(飞索)	2021+	GQFN-8(3.23x3.28)	499		询价
深圳市安富世纪电子有限公司	CY15B104QN-50SXIES	CYPRESS	23+	SOP	50000	全新原装正品现货,支持订货	询价
深圳市湘达电子科技有限公司	CY15B104QN-50SXIESIC	CYPRESS/赛普拉斯	2022+		6600	只做原装,假一罚十,长期供货。	询价
贸泽芯城（深圳）电子科技有限公司	CY15B104QN-50LPXI	CYPRESS/赛普拉斯	23+	NA	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市威雅利发展有限公司	CY15B104QN-50SXIES	CYPRESS	1743	SOP	5	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市鹏顺微电子科技有限公司	CY15B104QN-20LPXC	SPANSION(飞索)	2022+原装正品	GQFN-8(3.23x3.28)	18000	支持工厂BOM表配单公司只做原装正品货	询价
深圳市福安瓯科技有限公司	CY15B104QN-50LPXIT	INFINEON/英飞凌	23+	PG-VQFN-8	28611	为终端用户提供优质元器件	询价

更多CY15B104QN供应商更新时间2026-2-3 19:00:00

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