4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial

Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv

文件：596.67 Kbytes 页数：42 Pages

INFINEON

英飞凌

4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial

Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv

文件：596.67 Kbytes 页数：42 Pages

INFINEON

英飞凌

F-RAM（铁电RAM）

Infineon

英飞凌

Package：8-SOIC（0.209"，5.30mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC FRAM 4MBIT SPI 50MHZ 8SOIC

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司