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CY15B102QN

2Mb EXCELON??Auto Ferroelectric RAM (F-RAM)

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see Data retention and endurance) - Infineon no delay technology writes - Advanced high-reliability ferr

文件:434.94 Kbytes 页数:43 Pages

INFINEON

英飞凌

CY15B102QN

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

文件:428.62 Kbytes 页数:44 Pages

INFINEON

英飞凌

CY15B102QN

Excelon??Auto 2-Mbit (256K 횞 8)Automotive-E Serial (SPI) F-RAM

文件:341.75 Kbytes 页数:32 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY15B102QN_V01

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

文件:428.62 Kbytes 页数:44 Pages

INFINEON

英飞凌

CY15B102QN-50PZXI

2Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 25) - Infineon instant non-volatile write technology - Adva

文件:456.83 Kbytes 页数:39 Pages

INFINEON

英飞凌

CY15B102QN-50SXE

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

文件:428.62 Kbytes 页数:44 Pages

INFINEON

英飞凌

CY15B102QN-50SXET

2Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 256K × 8, automotive grade 1

Features • 2Mb ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanc

文件:428.62 Kbytes 页数:44 Pages

INFINEON

英飞凌

CY15B102QN-50PZXI

F-RAM(铁电RAM)

Infineon

英飞凌

CY15B102QN-50SXE

2Mb 3.3V 汽车级(E) 50MHz SPI EXCELON ™ F-RAM,8 引脚 SOIC 封装

Infineon

英飞凌

CY15B102QN-50SXI

F-RAM(铁电RAM)

Infineon

英飞凌

技术参数

  • Peak Reflow Temp:

    260 °C

  • Operating Temperature:

    -40 °C to 85 °C

  • Operating Voltage(VCCQ):

    1.8 V to 3.6 V

  • Operating Voltage:

    1.8 V to 3.6 V

  • Lead Ball Finish:

    Pure Sn

  • Interfaces:

    SPI

  • Family:

    Excelon™

  • Organization (X x Y):

    256Kb x 8

  • Currently planned availability until at least:

    2033

  • Qualification:

    Industrial

  • Speed:

    0 ns

  • Frequency:

    50 MHz

供应商型号品牌批号封装库存备注价格
SPANSION(飞索)
2447
SOIC-8
315000
188个/管一级代理专营品牌!原装正品,优势现货,长期
询价
SPANSION(飞索)
2021+
SOIC-8
499
询价
CYPRESS/赛普拉斯
23+
NA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
CYPRESS/赛普拉斯
24+
SOIC-8
3980
原装正品 房间现货
询价
SPANSION(飞索)
2022+原装正品
SOIC-8
18000
支持工厂BOM表配单 公司只做原装正品货
询价
INFINEON/英飞凌
23+
PG-USON-8
28611
为终端用户提供优质元器件
询价
CYPRESS/赛普拉斯
22+
SOIC-8
3980
原装正品
询价
INFINEON
23+
K-W
470
只有原装,请来电咨询
询价
CYPRESS
2023
N/N
1410
全新、原装正品,假一赔十
询价
Infineon
133
只做正品
询价
更多CY15B102QN供应商 更新时间2026-2-4 15:01:00