8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：860.72 Kbytes 页数：24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles

文件：952.74 Kbytes 页数：25 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

8-Mbit (1024 K 횞 8/512 K 횞 16) nvSRAM

文件：889.09 Kbytes 页数：24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：860.72 Kbytes 页数：24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：860.72 Kbytes 页数：24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：860.72 Kbytes 页数：24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：860.72 Kbytes 页数：24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：860.72 Kbytes 页数：24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：860.72 Kbytes 页数：24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

8 Mbit (1024K x 8/512K x 16) nvSRAM

Functional Description The Cypress CY14B108L/CY14B108N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：860.72 Kbytes 页数：24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司