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HMIGTO1310FC

Advancedtouchscreenpanel,HarmonyGTO,3.5ColorTouchQVGATFT,coateddisplay

SCHNEIDERSchneider electric

施耐德施耐德电气

HMIGTO1310FCW

Advancedtouchscreenpanel,HarmonyGTO,3.5ColorTouchQVGATFT,coateddisplaywithoutlogo

SCHNEIDERSchneider electric

施耐德施耐德电气

HMIGTO1310FW

Advancedtouchscreenpanel,HarmonyGTO,3.5ColorTouchQVGATFT,logoremoved

SCHNEIDERSchneider electric

施耐德施耐德电气

HW1310ALPL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HW1310BKPL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310AL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310BK

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HY1310D

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微华羿微电子股份有限公司

HY1310U

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微华羿微电子股份有限公司

HY1310V

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微华羿微电子股份有限公司

IIRF1310N

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310N

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1310NL

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1310NL

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310NLPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1310NPBF

HEXFETPOWERMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1310NPBF

ADVANCEDPROCESSTECHNOLOGY

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1310NS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    CXA1310AQ

  • 制造商:

    SONY

  • 制造商全称:

    Sony Corporation

  • 功能描述:

    Single Chip Processing for CCD Monochrome Camera

供应商型号品牌批号封装库存备注价格
SONY/索尼
24+
QFP32
26656
SONY/索尼主营型号-原装正品
询价
SONY
23+
QFP-32P
9600
询价
SONY
19+
QFP32
50000
全新原装
询价
SONY
2024+
QFP32
32560
原装优势绝对有货
询价
23+
QFP
8000
全新原装现货,欢迎来电咨询
询价
SONY
2020+
QFP
1
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SONY
QFP32
04+
23
全新原装进口自己库存优势
询价
SONY
2022
QFP-32P
2058
原厂原装正品,价格超越代理
询价
SONY
99+
QFP-32P
280
现货
询价
SONY
22+
TQFP
3600
绝对原装!现货热卖!
询价
更多CXA1310AQ供应商 更新时间2024-6-18 10:12:00