丝印：CX28C010DMB-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：CX28C010DMB-15；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：CX28C010DMB-20；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：CX28C010FMB-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：CX28C010FMB-15；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：CX28C010KMB-12；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：CX28C010KMB-15；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：CX28C010NMB-12；Package：LCC；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：CX28C010NMB-15；Package：LCC；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨

丝印：CX28C010RMB-25；Package：SOIC；5V, Byte Alterable EEPROM

Features • Access time: 120ns • Simple byte and page write - Single 5V supply - No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low power CMOS - Active: 50mA - Standby: 500μA • Software

文件：823.93 Kbytes 页数：20 Pages

RENESAS

瑞萨