Small-signal Schottky barrier diode

Feature：High current / Low VF\nInternal Connection：Single\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Average Forward Current IO 1 A \nReverse Voltage VR 20 V ;

Toshiba

东芝

丝印：8C；Package：USC；Schottky Barrier Diode Silicon Epitaxial

文件：136.58 Kbytes 页数：5 Pages

TOSHIBA

东芝

Package：SC-76，SOD-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 1A USC

Toshiba Semiconductor and Storage

LVX Series Power MOSFET

文件：45.23 Kbytes 页数：1 Pages

ETC1List of Unclassifed Manufacturers

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10.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：299.35 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

MOS GATED BARRIER RECTIFIER

文件：136.7 Kbytes 页数：3 Pages

UTC

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