Small-signal Schottky barrier diode

Feature：High-speed switching\nInternal Connection：Single\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available Average Forward Current IO 1.5 A \nReverse Voltage VR 30 V ;

Toshiba

东芝

丝印：8E；Package：US2H；Schottky Barrier Diode Silicon Epitaxial

文件：251.62 Kbytes 页数：5 Pages

TOSHIBA

东芝

Package：2-SMD，扁平引线；包装：卷带（TR）剪切带（CT）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SBD SINGLE 30V, 1.5A, IN 2 PIN U

Toshiba Semiconductor and Storage

1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体