Fast Recovery and High Power Diode

Features The CTNS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15 V is realized by optimizing the relationship of trade-off between VF and trr. It has the characteristics suit for PFC circuit of DCM and

文件：437.92 Kbytes 页数：7 Pages

SANKEN

三垦

600V、60A规格的高速整流二极管

CTNS-6606S为600V、60A规格的高速整流二极管。由于采用生命期控制的最优化设计，trr时间能够实现150ns。由于采用大电流用的封装设计，散热性能更好。 低损耗超高速高散热性封装;

Sanken

三垦

Fast Recovery and High Power Diode

Features The CTXS-6606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.45 V is realized by optimizing the relationship of trade-off between VF and trr. It has the characteristics suit for PFC circuit of CCM. Th

文件：437.48 Kbytes 页数：7 Pages

SANKEN

三垦

Fast Recovery Diode

FEATURES · Ultrafast recovery time · Low forward voltage, high efficiency · Pb-free(RoHS compliant) APPLICATIONS · DC-DC converter · PFC circuit · Large current secondary side rectifier

文件：308.78 Kbytes 页数：2 Pages

ISC

无锡固电

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 75 A, 3

文件：143.54 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体