Fast Recovery and High Power Diode

Features The CTNS-6306S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15 V is realized by optimizing the relationship of trade-off between VF and trr. It has the characteristics suit for PFC circuit of DCM and

文件：440.27 Kbytes 页数：7 Pages

Sanken

三垦

600V、30A规格的高速整流二极管

CTNS-6306S为600V、30A规格的高速整流二极管。由于采用生命期控制的最优化设计，trr时间能够实现100ns。由于采用大电流用的封装设计，散热性能更好。 低损耗超高速高散热性封装;

Sanken

三垦

DC / DC Converter Applications

文件：92.81 Kbytes 页数：5 Pages

SANYO

三洋

Dual P-Channel 2.5V Specified PowerTrench??MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

文件：235.41 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Dual P-Channel 20 V (D-S) MOSFET

文件：1.94721 Mbytes 页数：9 Pages

VBSEMI

微碧半导体