| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CABLEASSEMBLY,RG216/U,75OHMNMALETO75OHMNMALE | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
ICforCMOSSystemReset | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI | ||
ICforCMOSSystemReset | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI | ||
36-MbitDDR™IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitDDR™IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitDDR™IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitQDR™IISRAM4-wordBurstArchitecture(2.5CycleReadlatency) Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitQDR™IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitQDR™IISRAM4-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
36-MbitQDR™IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
CSS-3618G
- 制造商：
CHINASEMI
- 制造商全称：
China Semiconductor Corporation
- 功能描述：
0.36 Inch Single Digit Display
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CSS |
24+ |
DIP |
52000 |
询价 | |||
CHINA |
24+/25+ |
1020 |
原装正品现货库存价优 |
询价 | |||
CHINA |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
23+ |
DIP/12 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | |||
2406+ |
DIP12 |
3886 |
优势代理渠道 原装现货 可全系列订货 |
询价 | |||
CUI |
22+ |
NA |
729 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
INFINEON |
23+ |
N/A |
8000 |
只做原装现货 |
询价 | ||
INFINEON |
23+ |
N/A |
7000 |
询价 | |||
CRYSTAL |
23+ |
SOP-8 |
7750 |
全新原装优势 |
询价 | ||
STACKPOLE |
20+ |
电阻器 |
2683 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
相关规格书
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