首页 >RMQSAA3618DGBA>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

RMQSAA3618DGBA

36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQSAA3618DGBA-182#AC0

36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQSAA3618DGBA-182#AC0

36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQSAA3618DGBA-202#AC0

36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQSDA3618DGBA

36-MbitQDR™IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQSGA3618DGBA

36-MbitQDR™IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RMQSKA3618DGBA

36-MbitQDR™IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT

Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems 

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

TDA3618

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

TDA3618

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

TDA3618AJR

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

TDA3618JR

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

TPS3618

BATTERY-BACKUPSUPERVISORFORRAMRETENTION

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

VS3618AH

N-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

ZCAT3618-D

ClampFilters(FerriteCorewithCase)

FEATURES •Uniqueplasticcaseensuressimple,convenientinstallationandincludesaself-holdingmechanismtopreventslippageoncables. •Ferritecoreprovidesexcellentabsorptionofhigh-frequencyEMC. •HighlyeffectiveascountermeasureagainstcommonmodeEMCwithoutadverseeffe

TDKTDK Corporation

TDK株式会社东电化(中国)投资有限公司

ZCAT3618-D

ClampFilters(FerriteCorewithCase)Forcable

ClampFiltersForCable FEATURES •Uniqueplasticcaseensuressimple,convenientinstallationandincludesaself-holdingmechanismtopreventslippageoncables. •Ferritecoreprovidesexcellentabsorptionofhigh-frequencyEMC. •Highlyeffectiveascountermeasureagainstcommon

TDKTDK Corporation

TDK株式会社东电化(中国)投资有限公司

ZCAT3618-D

ClampFiltersForCable

ClampFiltersForCable FEATURES •Uniqueplasticcaseensuressimple,convenientinstallationandincludesaself-holdingmechanismtopreventslippageoncables. •Ferritecoreprovidesexcellentabsorptionofhigh-frequencyEMC. •Highlyeffectiveascountermeasureagainstcommon

TDKTDK Corporation

TDK株式会社东电化(中国)投资有限公司

供应商型号品牌批号封装库存备注价格
DBLECTRO
23+
原厂原包
29960
只做进口原装 终端工厂免费送样
询价
亚成微
23+
TOLL
7500
亚成微全系列在售
询价
TOS
07+
SOT-123
9000
询价
reso
420
公司优势库存 热卖中!
询价
RESON
23+
6540
只做原装正品现货或者订货假一赔十!
询价
更多RMQSAA3618DGBA供应商 更新时间2024-9-23 15:00:00