LV MOSFET

CASS

凯思

N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT

文件：159.35 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Reverse Conducting IGBT with monolithic body diode

Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat

文件：304 Kbytes 页数：12 Pages

Infineon

英飞凌

Reverse Conducting IGBT with monolithic body diode

文件：356.25 Kbytes 页数：12 Pages

Infineon

英飞凌