首页 >CSE3N100D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andAC-DCmotorcontrols | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Corporation | IXYS | ||
TMOSPOWERFET3.0AMPERES1000VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminations | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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