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CSD88537ND

丝印:88537N;Package:SOIC;CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c

文件:476.34 Kbytes 页数:11 Pages

TI

德州仪器

CSD88537ND

丝印:88537N;Package:SOIC(D);CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c

文件:479.72 Kbytes 页数:12 Pages

TI

德州仪器

CSD88537ND.B

丝印:88537N;Package:SOIC;CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c

文件:476.34 Kbytes 页数:11 Pages

TI

德州仪器

CSD88537ND.B

CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c

文件:479.72 Kbytes 页数:12 Pages

TI

德州仪器

CSD88537ND_V01

CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c

文件:479.72 Kbytes 页数:12 Pages

TI

德州仪器

CSD88537NDG4

丝印:88537N;Package:SOIC(D);CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c

文件:479.72 Kbytes 页数:12 Pages

TI

德州仪器

CSD88537NDG4.B

丝印:88537N;Package:SOIC(D);CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c

文件:479.72 Kbytes 页数:12 Pages

TI

德州仪器

CSD88537NDG4.B

丝印:88537N;Package:SOIC;CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c

文件:476.34 Kbytes 页数:11 Pages

TI

德州仪器

CSD88537NDT

丝印:88537N;Package:SOIC;CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c

文件:476.34 Kbytes 页数:11 Pages

TI

德州仪器

CSD88537NDT

丝印:88537N;Package:SOIC(D);CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low c

文件:479.72 Kbytes 页数:12 Pages

TI

德州仪器

技术参数

  • Configuration:

    Dual

  • Rds(on) max at VGS=10 V (mOhms):

    15

  • IDM - pulsed drain current (Max) (A):

    62

  • QG typ (nC):

    14

  • QGD typ (nC):

    2.3

  • Package (mm):

    SO-8

  • VGS (V):

    20

  • VGSTH typ (V):

    3

  • ID - silicon limited at Tc=25degC (A):

    16

  • ID - package limited (A):

    15

  • Logic level:

    No

供应商型号品牌批号封装库存备注价格
TI/德州仪器
2223+
SOIC-8
6400
A3-7货柜原装正品支持实单
询价
TI/德州仪器
21+
NA
12500
只做全新原装公司现货特价
询价
TI/德州仪器
25+
SOIC-8
32360
TI/德州仪器全新特价CSD88537ND即刻询购立享优惠#长期有货
询价
德州仪器/TI
24+
WSON8
2000
全新原装深圳仓库现货有单必成
询价
TI/德州仪器
23+
SOIC8
18204
原装正品代理渠道价格优势
询价
TI/德州仪器
21+
SNAIC-8
20000
一级代理品牌,价格优势原装正品准则
询价
TI
23+
SOIC-8
30000
全新原装正品
询价
TI(德州仪器)
25+
5000
只做原装 假一罚百 可开票 可售样
询价
Texas Instruments
25+
SOIC8
18000
TI优势渠道,大量原装库存现货,交期快,欢迎询价。
询价
TI/德州仪器
22+
SOIC-8_150mil
500000
原装现货支持实单价优/含税
询价
更多CSD88537N供应商 更新时间2025-12-24 16:42:00