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首页>CSD16411Q3>芯片详情
CSD16411Q3_TI/德州仪器_MOSFET N-Ch NexFET Power MOSFETs博速半导体
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产品属性
- 类型
描述
- 型号
:CSD16411Q3
- Configuration
:Single
- Rds(on) max at VGS=4.5 V (mOhms)
:15
- Rds(on) max at VGS=10 V (mOhms)
:10
- IDM - pulsed drain current (Max) (A)
:138
- QG typ (nC)
:2.9
- QGD typ (nC)
:0.7
- Package (mm)
:SON3x3
- VGS (V)
:16
- VGSTH typ (V)
:2
- ID - silicon limited at Tc=25degC (A)
:56
- ID - package limited (A)
:60
- Logic level
:Yes
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